Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Ultraviolet band C (UV-C) micro light-emitting diodes (micro-LEDs) provide a high energy light emission of 200–280 nm, which are brilliantly utilized in optogenetics, communications, and fluorescence. However, the limited device efficiency notably restricts grand potential application field. In this work, three types 20 × ?m 2 UV-C micro-LEDs with peak wavelength 269 nm fabricated by different etching strategies, including an inductively coupled plasma (ICP), post-ICP tetramethylammonium hydroxide, hybrid scheme combining chemical treatment. By enhancing radiative recombination extraction, improves external quantum to 3.45%, elevation 57.5% compared ICP. A step advance forward injection current ideality factor is also found on devices due better contact AlGaN surface.